?2002 fairchild semiconductor corporation rev. b2, november 2002 SS9015 pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current -100 ma p c collector power dissipation 450 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = -100 a, i e =0 -50 v bv ceo collector-emitter breakdown voltage i c = -1ma, i b =0 -45 v bv ebo emitter-base breakdown voltage i e = -100 a, i c =0 -5 v i cbo collector cut-off current v cb = -50v, i e =0 -50 na i ebo emitter cut-off current v eb = -5v, i c =0 -50 na h fe dc current gain v ce = -5v, i c = -1ma 60 1000 v ce (sat) collector-base saturation voltage i c = -100ma, i b = -5ma -0.7 v be (sat) base-emitter saturation voltage i c = -100ma, i b = -5ma -1.0 v v be (on) base-emitter on voltage v ce = -5v, i c = -2ma -0.6 -0.75 v c ob output capacitance v cb = -10v, i e =0 f=1mhz 4.5 7.0 pf f t current gain bandwidth product v ce = -5v, i c = -10ma 100 190 mhz nf noise figure v ce = -5v, i c = -0.2ma f=1khz, r s =1k ? 0.7 10 db classification a b c d h fe 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000 1. emitter 2. base 3. collector SS9015 low frequency, low noise amplifier ? complement to ss9014 to-92 1
?2002 fairchild semiconductor corporation SS9015 rev. b2, november 2002 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gian bandwidth product -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0 -10 -20 -30 -40 -50 i b = -400 a i b = -350 a i b = -300 a i b = -250 a i b = -200 a i b = -150 a i b = -100 a i b = -50 a i c [ma], collector current v ce [v], collector-emitter voltage -0.1 -1 -10 -100 -1000 -10 -100 -1000 v ce = -5v h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -10 -100 -1000 i c = 20 i b v be (sat) v ce (sat) v be (sat), v ce (sat)[mv], saturation voltage i c [ma], collector current -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 v ce = -5v i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 1 10 f = 1 mhz i e = 0 c ob [pf], output capacitance v cb [v], collector-base voltage -1 -10 10 100 1000 v ce = -6v f t [mhz], current gain bandwidth product i c [ma], collector current
0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 package dimensions SS9015 dimensions in millimeters ?2002 fairchild semiconductor corporation rev. b2, november 2002
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